PART |
Description |
Maker |
HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24 High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO)) 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO)) 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
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SIEMENS AG http:// Siemens Semiconductor Group
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HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M x 72 Bit ECC DRAM Module unbuffered 4M x 64 Bit DRAM Module unbuffered 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组 GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power 8M x 8 Bit 4k EDO DRAM 8M x 8 Bit 8k EDO DRAM 8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HY |
4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns 4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns 4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM 4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM -4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYM364025GS-60 HYM364025GS-50 HYM364025S-60 HYM364 |
4M x 36-Bit EDO - DRAM Module 4米36位EDO公司-记忆体模 4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72 4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 50 ns, SMA72 4M x 36 Bit EDO DRAM Module with Parity
|
INFINEON TECHNOLOGIES AG SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
HYM72V1005GU-60 HYM72V1005GU-50 HYM64V1005GU-60 HY |
1M x 72 Bit ECC DRAM Module unbuffered 1M x 64 Bit DRAM Module unbuffered From old datasheet system 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
Q67100-Q3017 HM364035 HYM364035GS-60 HYM364035S HY |
4M x 36 Bit EDO DRAM Module with Parity From old datasheet system 4M x 36-Bit EDO-DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|
K4E151611D-JL50 K4E151612D-TL50 |
1M X 16 EDO DRAM, 50 ns, PDSO42 1M X 16 EDO DRAM, 50 ns, PDSO44
|
|
HM51W16165 HM51W16165J-5 HM51W16165J-6 HM51W16165J |
1M X 16 EDO DRAM, 60 ns, PDSO44 16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh
|
ELPIDA MEMORY INC
|
HYM72V2005GS-60 HYM72V2005GS-50 HYM72V2005GS-50- |
-2M x 72-Bit EDO-DRAM Module 2M x 72-Bit EDO-DRAM Module (ECC - Module) 2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
GM71C18163CLT-6 GM71C18163CLJ-7 GM71C18163CLT-7 |
1M X 16 EDO DRAM, 60 ns, PDSO44 1M X 16 EDO DRAM, 70 ns, PDSO42 1M X 16 EDO DRAM, 70 ns, PDSO44
|
HYNIX SEMICONDUCTOR INC
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